International Rectifier Corporation IRGIH50FD | 搜芯易Sourcengine

International Rectifier Corporation IRGIH50FD

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-259AA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
2.9 V
JESD-30 Code
R-MSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-259AA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
FAST
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
45 A
Power Dissipation-Max (Abs)
200 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5.5 V
Collector-emitter Voltage-Max
1200 V
Power Dissipation Ambient-Max
200 W