INFINEON TECHNOLOGIES AG IRGIB4640DPBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRGIB4640DPBF

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET IGBT DISCRETES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
1.9
Polarity/Channel Type
N-Channel
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
64
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
119
Collector Current-Max (IC) (A)
65
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
600