INFINEON TECHNOLOGIES AG IRGIB15B60KD1P | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRGIB15B60KD1P

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
INFINEON - IRGIB15B60KD1P - IGBT, 19 A, 2.2 V, 52 W, 600 V, TO-220FP, 3 Pins
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
73
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
35
Power Dissipation-Max (W)
52
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
55
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
250
Collector Current-Max (IC) (A)
19
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED