International Rectifier Corporation IRGBC30M | 搜芯易Sourcengine

International Rectifier Corporation IRGBC30M

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, TO-220AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
2.9 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
SHORT CIRCUIT RATED
Fall Time-Max (tf)
470 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
61 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
1190 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
26 A
Power Dissipation-Max (Abs)
100 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5.5 V
Collector-emitter Voltage-Max
600 V
Power Dissipation Ambient-Max
100 W