INFINEON TECHNOLOGIES AG IRGB4715DPBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRGB4715DPBF

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans IGBT Chip N-CH 650V 21A 3-Pin TO-220AB Tube
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
Single
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2
Terminal Position
SINGLE
Fall Time-Max (ns)
30
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
30
Power Dissipation-Max (W)
100
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
80
Turn-on Time-Nom (ton) (ns)
50
Gate-emitter Voltage-Max (V)
30
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
150
Turn-off Time-Nom (toff) (ns)
120
Collector Current-Max (IC) (A)
21
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
7.4
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED