INFINEON TECHNOLOGIES AG IRG8CH37K10F | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRG8CH37K10F

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
IGBT 1200V 100A DIE
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max (V)
30
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
35
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED