International Rectifier Corporation IRG7PH35UD1PBF | 搜芯易Sourcengine

International Rectifier Corporation IRG7PH35UD1PBF

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT W/ULTRA-LOW VF DIODE FOR IN
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AC
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
105
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
179
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
30
Turn-off Time-Nom (toff) (ns)
400
Collector Current-Max (IC) (A)
50
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
1200