International Rectifier Corporation IRG7IC23FDPBF | 搜芯易Sourcengine

International Rectifier Corporation IRG7IC23FDPBF

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Fall Time-Max (ns)
168
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
67
Power Dissipation-Max (W)
37
Gate-emitter Voltage-Max (V)
30
Collector Current-Max (IC) (A)
18
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
600