INFINEON TECHNOLOGIES AG IRG7IC18FDPBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRG7IC18FDPBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
1.85
Case Connection
ISOLATED
Terminal Position
SINGLE
Fall Time-Max (ns)
190
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
50
Power Dissipation-Max (W)
30
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
95
Turn-on Time-Nom (ton) (ns)
70
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
390
Turn-off Time-Nom (toff) (ns)
350
Collector Current-Max (IC) (A)
14
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED