INFINEON TECHNOLOGIES AG IRG5U150HF06A | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRG5U150HF06A

生命周期状态
EOL
说明
IGBT MOD 600V 200A 660W POWIR 34
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.9 V
Case Connection
ISOLATED
Polarity/Channel Type
N-Channel
Turn-on Time-Nom (ton)
115000 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
835 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-40 Cel
Collector Current-Max (IC)
150 A
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5.5 V
Collector-emitter Voltage-Max
600 V
Configuration
Half Bridge