INFINEON TECHNOLOGIES AG IRG4BC20W-STRR | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRG4BC20W-STRR

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (ns)
96
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
60
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
36
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
300
Collector Current-Max (IC) (A)
13
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600