IRG4BC20UD-SPBFTRL
INFINEON TECHNOLOGIES AG
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 6.5A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-609 Codee3
- Surface MountYES
- Terminal FinishMATTE TIN OVER NICKEL
- Fall Time-Max (tf)170 ns
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)6.5 A
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)60 W
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max600 V
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IRG4BC20UD-SPBFTRL