International Rectifier Corporation IRG4BC10SD-LPBF | 搜芯易Sourcengine

International Rectifier Corporation IRG4BC10SD-LPBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (tf)
1080 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
106 ns
Turn-off Time-Nom (toff)
1780 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
14 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
38 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6 V
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30