TT ELECTRONICS PLC IRFY130C | 搜芯易Sourcengine

TT ELECTRONICS PLC IRFY130C

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-MSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-257AB
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
14.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Drain-source On Resistance-Max (ohm)
0.18