IRFY044C-JQR-BR1
TT ELECTRONICS PLC
- 生命周期状态NRFND
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee1
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Number of Elements1
- Drain Current-Max (ID) (A)20
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Drain-source On Resistance-Max (ohm)0.035
IRFY044C-JQR-BR1有0家供应商货源可供购买或竞价
提交询价
提交询价 您的询价单将直接发送给我们的销售专家: Pari
提交询价
IRFY044C-JQR-BR1
提交询价
IRFY044C-JQR-BR1