International Rectifier Corporation IRFU4105PBF | 搜芯易Sourcengine

International Rectifier Corporation IRFU4105PBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
20 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
46 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
65 mJ
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
48 W
Drain-source On Resistance-Max
0.045 ohm
Pulsed Drain Current-Max (IDM)
100 A
Time@Peak Reflow Temperature-Max (s)
30