HARRIS SEMICONDUCTOR IRFU214 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR IRFU214

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
25
Drain Current-Max (ID) (A)
2.2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
250
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
25
Avalanche Energy Rating (Eas) (mJ)
61
Pulsed Drain Current-Max (IDM) (A)
8.8
Drain-source On Resistance-Max (ohm)
2