Samsung Semiconductor, Inc. IRFR9012 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. IRFR9012

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
4.5 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
80 ns
DS Breakdown Voltage-Min
50 V
Turn-off Time-Max (toff)
79 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
25 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
240 mJ
Power Dissipation Ambient-Max
25 W
Drain-source On Resistance-Max
0.7 ohm
Pulsed Drain Current-Max (IDM)
18 A