FAIRCHILD SEMICONDUCTOR CORP IRFR420T | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP IRFR420T

生命周期状态
Active
说明
2.5A, 500V, 3OHM, N-CHANNEL MOSF
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
500 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
210 mJ
Drain-source On Resistance-Max
3 ohm
Pulsed Drain Current-Max (IDM)
8 A