Vishay Intertechnology, Inc. IRFPS30N60KPBF | 搜芯易Sourcengine

Vishay Intertechnology, Inc. IRFPS30N60KPBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 30A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-274AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
30 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
450 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
520 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.19 ohm
Pulsed Drain Current-Max (IDM)
120 A
Time@Peak Reflow Temperature-Max (s)
30