Samsung Semiconductor, Inc. IRFP231 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. IRFP231

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
9 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
80 ns
DS Breakdown Voltage-Min
150 V
Turn-off Time-Max (toff)
90 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
75 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
170 mJ
Power Dissipation Ambient-Max
75 W
Drain-source On Resistance-Max
0.4 ohm
Pulsed Drain Current-Max (IDM)
36 A