TT ELECTRONICS PLC IRFNJZ48 | 搜芯易Sourcengine

TT ELECTRONICS PLC IRFNJZ48

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 22A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-276AA
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
22
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
55
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
88
Drain-source On Resistance-Max (ohm)
0.016
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED