International Rectifier Corporation IRFNG50PBF | 搜芯易Sourcengine

International Rectifier Corporation IRFNG50PBF

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 5.5A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-CDSO-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
5.5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
74
DS Breakdown Voltage-Min (V)
1000
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
270
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
150
Avalanche Energy Rating (Eas) (mJ)
860
Pulsed Drain Current-Max (IDM) (A)
22
Drain-source On Resistance-Max (ohm)
2.25
Time@Peak Reflow Temperature-Max (s)
40