IRFM350-QR-BR1
TT ELECTRONICS PLC
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-254AA
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee1
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureHIGH VOLTAGE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)14
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)400
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)56
- Drain-source On Resistance-Max (ohm)0.415
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IRFM350-QR-BR1