INFINEON TECHNOLOGIES AG IRFM250 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRFM250

生命周期状态
Active
说明
Single N-Channel 200 V 100 mOhm 115 nC 150 W Power Transistor TO-254AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
150
Drain Current-Max (ID) (A)
27.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
500
Pulsed Drain Current-Max (IDM) (A)
110
Drain-source On Resistance-Max (ohm)
0.105