INFINEON TECHNOLOGIES AG IRFI9Z34NPBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRFI9Z34NPBF

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 14A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
MATTE TIN OVER NICKEL
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
37
Drain Current-Max (ID) (A)
14
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
55
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
180
Pulsed Drain Current-Max (IDM) (A)
68
Drain-source On Resistance-Max (ohm)
0.1