INFINEON TECHNOLOGIES AG IRFHM8363TR2PBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRFHM8363TR2PBF

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET 2N-CH 30V 11A 8PQFN
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-N8
Configuration
2 N-Channel (Dual)
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
19
Drain Current-Max (ID) (A)
10
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
100
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
29
Pulsed Drain Current-Max (IDM) (A)
116
Drain-source On Resistance-Max (ohm)
0.0149