INFINEON TECHNOLOGIES AG IRFG5110 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRFG5110

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CDIP-T14
Configuration
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
MO-036AB
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
4
Number of Terminals
14
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID) (A)
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
75
Pulsed Drain Current-Max (IDM) (A)
4
Drain-source On Resistance-Max (ohm)
0.8