International Rectifier Corporation IRFG110PBF | 搜芯易Sourcengine

International Rectifier Corporation IRFG110PBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-CDIP-T14
Configuration
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
MO-036AB
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
4
Number of Terminals
14
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
45 ns
DS Breakdown Voltage-Min
100 V
Turn-off Time-Max (toff)
80 ns
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
75 mJ
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
1.4 W
Drain-source On Resistance-Max
0.8 ohm
Pulsed Drain Current-Max (IDM)
4 A
Time@Peak Reflow Temperature-Max (s)
40