IRFG110-JQR-BR1
TT ELECTRONICS PLC
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDIP-T14
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee1
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureAVALANCHE ENERGY RATED
- Number of Elements4
- Number of Terminals14
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.8
IRFG110-JQR-BR1有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
IRFG110-JQR-BR1