- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Small Signal Field-Effect Transistor, 0.32A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PDIP-T3
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.32 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max1.3 W
- Drain-source On Resistance-Max4.4 ohm
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IRFD620