HARRIS SEMICONDUCTOR IRFD312 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR IRFD312

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 0.3A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.3 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
400 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
5 ohm