HARRIS SEMICONDUCTOR IRFD113 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR IRFD113

生命周期状态
EOL
说明
IRFD113
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1
Drain Current-Max (ID) (A)
0.8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
80
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.8