VISHAY SILICONIX IRFBF20LPBF | 搜芯易Sourcengine

VISHAY SILICONIX IRFBF20LPBF

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-262
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
1.7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
900
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
180
Pulsed Drain Current-Max (IDM) (A)
6.8
Drain-source On Resistance-Max (ohm)
8
Time@Peak Reflow Temperature-Max (s)
40