INFINEON TECHNOLOGIES AG IRFB59N10DPBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRFB59N10DPBF

生命周期状态
EOL
RoHS
符合RoHS标准
说明
INFINEON - IRFB59N10DPBF - MOSFET Transistor, N Channel, 59 A, 100 V, 25 mohm, 10 V, 5.5 V RoHS Compliant: Yes
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
200
Drain Current-Max (ID) (A)
59
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
190
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
510
Pulsed Drain Current-Max (IDM) (A)
236
Drain-source On Resistance-Max (ohm)
0.025