Samsung Semiconductor, Inc. IRF9Z20 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. IRF9Z20

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
40
Drain Current-Max (ID) (A)
9.7
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
98
DS Breakdown Voltage-Min (V)
50
Turn-off Time-Max (toff) (ns)
56
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
40
Avalanche Energy Rating (Eas) (mJ)
4.2
Pulsed Drain Current-Max (IDM) (A)
39
Drain-source On Resistance-Max (ohm)
0.28