Samsung Semiconductor, Inc. IRF9641 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. IRF9641

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 11A I(D), 150V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
11 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
45 ns
DS Breakdown Voltage-Min
150 V
Turn-off Time-Max (toff)
30 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
380 mJ
Power Dissipation Ambient-Max
125 W
Drain-source On Resistance-Max
0.5 ohm
Pulsed Drain Current-Max (IDM)
44 A