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IRF820

HARRIS SEMICONDUCTOR

HARRIS SEMICONDUCTOR IRF820
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • Application
    SWITCHING
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-220AB
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e0
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    50
  • Drain Current-Max (ID) (A)
    2.5
  • Transistor Element Material
    SILICON
  • Turn-on Time-Max (ton) (ns)
    33
  • DS Breakdown Voltage-Min (V)
    500
  • Turn-off Time-Max (toff) (ns)
    60
  • Operating Temperature-Max (Cel)
    150
  • Power Dissipation Ambient-Max (W)
    50
  • Pulsed Drain Current-Max (IDM) (A)
    8
  • Drain-source On Resistance-Max (ohm)
    3

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IRF820