IRF7807VD2TRPBF
International Rectifier Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 8.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- JESD-609 Codee3
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)8.3 A
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)2.5 W
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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IRF7807VD2TRPBF