INFINEON TECHNOLOGIES AG IRF7759L2TRPBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRF7759L2TRPBF

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET N-CH Si 75V 160A 15-Pin Direct-FET L8 T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XBCC-N9
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
375
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
75
Feedback Cap-Max (Crss) (pF)
609
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
257
Pulsed Drain Current-Max (IDM) (A)
640
Drain-source On Resistance-Max (ohm)
0.0023
Time@Peak Reflow Temperature-Max (s)
30