International Rectifier Corporation IRF7759L2TRPBF | 搜芯易Sourcengine

International Rectifier Corporation IRF7759L2TRPBF

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IRF7759 - 12V-300V N-CHANNEL POW
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XBCC-N9
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
26
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
75
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
257
Pulsed Drain Current-Max (IDM) (A)
640
Drain-source On Resistance-Max (ohm)
0.0023