IRF7665S2TRPBF
INFINEON TECHNOLOGIES AG
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET N-CH 100V 4.1A DIRECTFET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XBCC-N2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMatte Tin (Sn)
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)30
- Drain Current-Max (ID) (A)4.1
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Feedback Cap-Max (Crss) (pF)30
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)37
- Pulsed Drain Current-Max (IDM) (A)58
- Drain-source On Resistance-Max (ohm)0.062
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IRF7665S2TRPBF