VISHAY SILICONIX IRF744 | 搜芯易Sourcengine

VISHAY SILICONIX IRF744

生命周期状态
EOL
说明
MOSFET mosfet n-channel 450v
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
8.8 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
450 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
540 mJ
Drain-source On Resistance-Max
0.63 ohm
Pulsed Drain Current-Max (IDM)
35 A