International Rectifier Corporation IRF7309TR | 搜芯易Sourcengine

International Rectifier Corporation IRF7309TR

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
2
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
4 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.4 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.05 ohm
Pulsed Drain Current-Max (IDM)
16 A
Time@Peak Reflow Temperature-Max (s)
30