International Rectifier Corporation IRF7203TR | 搜芯易Sourcengine

International Rectifier Corporation IRF7203TR

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
4.3 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
20 V
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
2.5 W
Drain-source On Resistance-Max
0.1 ohm