INFINEON TECHNOLOGIES AG IRF711 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRF711

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2 A
DS Breakdown Voltage-Min
350 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
36 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
3.6 ohm
Pulsed Drain Current-Max (IDM)
5 A