INFINEON TECHNOLOGIES AG IRF6665TR1PBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRF6665TR1PBF

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-CH 100V 4.2A DIRECTFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XBCC-N2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
42
Drain Current-Max (ID) (A)
4.2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
29
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Avalanche Energy Rating (Eas) (mJ)
11
Pulsed Drain Current-Max (IDM) (A)
34
Drain-source On Resistance-Max (ohm)
0.062