VISHAY SILICONIX IRF640STRLPBF | 搜芯易Sourcengine

VISHAY SILICONIX IRF640STRLPBF

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
TO-263-3 (D2PAK)
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
18
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
580
Pulsed Drain Current-Max (IDM) (A)
72
Drain-source On Resistance-Max (ohm)
0.18
Time@Peak Reflow Temperature-Max (s)
40