Samsung Semiconductor, Inc. IRF634 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. IRF634

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
74
Drain Current-Max (ID) (A)
8.1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
250
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.45