IRF624S
VISHAY SILICONIX
- 生命周期状态EOL
- 说明MOSFET N-CH 250V 4.4A D2PAK
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)4.4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)250
- Avalanche Energy Rating (Eas) (mJ)100
- Pulsed Drain Current-Max (IDM) (A)14
- Drain-source On Resistance-Max (ohm)1.1
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IRF624S